Author :
Kishi, T. ; Yoda, H. ; Kai, T. ; Nagase, T. ; Kitagawa, E. ; Yoshikawa, M. ; Nishiyama, K. ; Daibou, T. ; Nagamine, M. ; Amano, M. ; Takahashi, S. ; Nakayama, M. ; Shimomura, N. ; Aikawa, H. ; Ikegawa, S. ; Yuasa, S. ; Yakushiji, K. ; Kubota, H. ; Fukushi
Abstract :
We investigate extremely low programming current and fast switching time of a perpendicular tunnel-magnetoresistance (P-TMR) for spin-transfer torque using a P-TMR cell of 50 nm-diameter. A L10-crystalline ordered alloy is used as a free layer that has excellent thermal stability and a damping constant of about 0.03. The programming current of 49 uA and the switching time of 4 nsec are also demonstrated.
Keywords :
MRAM devices; magnetic switching; magnetic tunnelling; magnetoresistance; thermal stability; L10-crystalline ordered alloy; damping constant; magnetoresistive random access memory; perpendicular TMR; spin-transfer-torque MRAM; thermal stability; tunnel-magnetoresistance; Damping; Linear programming; Magnetic anisotropy; Magnetic switching; Perpendicular magnetic anisotropy; Random access memory; Scalability; Thermal stability; Torque; Tunneling magnetoresistance;
