Title :
V-band and W-band broadband, monolithic distributed frequency multipliers
Author :
Carman, E. ; Case, M. ; Kamegawa, M. ; Yu, R. ; Giboney, K. ; Rodwell, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Broadband V-band and W-band frequency multiplication is reported using soliton propagation on GaAs monolithic nonlinear transmission lines. With 24-dBm input, a doubler attained 17.4-dBm peak output power with at least 52-63.1-GHz 3-dB bandwidth, and a tripler attained 12.8-dBm peak output power with at least 81-108.8-GHz 3-dB bandwidth. These multipliers were fabricated with 3- mu m design rules on GaAs and driven with lower-frequency amplifiers, and are cost-effective sources of high-frequency power.<>
Keywords :
III-V semiconductors; MMIC; frequency multipliers; solitons; 3 micron; 52 to 63.1 GHz; 81 to 108.8 GHz; GaAs; V-band; W-band; design rules; doubler; high-frequency power; lower-frequency amplifiers; monolithic distributed frequency multipliers; monolithic nonlinear transmission lines; soliton propagation; tripler; Bandwidth; Capacitance; Frequency conversion; Impedance; Power amplifiers; Power generation; Power transmission lines; Propagation delay; Schottky diodes; Solitons;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188113
