Title :
ESD qualification changes for 45nm and beyond
Author :
Duvvury, Charvaka
Author_Institution :
Texas Instrum. Inc., Dallas, TX
Abstract :
As the silicon technologies advance further into sub-50 nm feature sizes, the circuit demands for high-speed operation are continually making ESD into a challenging issue. This paper reviews the current perception about ESD and why there must be an immediate paradigm shift for the ESD qualification requirements.
Keywords :
electrostatic discharge; radiation hardening (electronics); semiconductor technology; ESD qualification changes; silicon technology; size 45 nm; Breakdown voltage; Capacitance; Current density; Degradation; Electrostatic discharge; Integrated circuit interconnections; Integrated circuit modeling; Protection; Qualifications; Silicon;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796688
