Title :
Impact of Strain on ESD Robustness of FinFET Devices
Author :
Griffoni, A. ; Thijs, S. ; Russ, C. ; Trémouilles, D. ; Scholz, M. ; Linten, D. ; Collaert, N. ; Rooyackers, R. ; Duvvury, C. ; Gossner, H. ; Meneghesso, G. ; Groeseneken, G.
Author_Institution :
IMEC, Leuven
Abstract :
The ESD performance of gated FinFET diodes and multi-gate NMOS devices in both active MOS-diode and parasitic-bipolar mode are investigated, highlighting the impact of strained SiN layers. Strain improves the ESD robustness up to 30% in multi-fin FinFETs. A different failure mechanism is discovered in strained NMOS FinFETs for the parasitic-bipolar mode.
Keywords :
MOSFET; electrostatic discharge; failure analysis; semiconductor device breakdown; semiconductor device reliability; semiconductor diodes; silicon compounds; ESD robustness; FinFET devices; SiN; active MOS-diode; multigate NMOS device; parasitic-bipolar mode; strain impact; Capacitive sensors; Diodes; Electrostatic discharge; Failure analysis; FinFETs; MOS devices; Robustness; Semiconductor films; Silicon compounds; Thermal conductivity;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796689
