A novel method for evaluating electron/hole mismatch in scaled split-gate SONOS memories

We propose a new simple method for lateral charge profiling of split-gate SONOS memory to separate trapped charge densities near and far from drain. Retention loss due to electron/hole mismatch is successfully reproduced with two hole components near and far from the drain that this method evaluates. The hole component far from the drain dominates the component near the drain in a scaled split-gate SONOS.