DocumentCode :
2929705
Title :
Approaching fermi level unpinning in Oxide-In0.2Ga0.8As
Author :
Chiang, T.H. ; Lee, W.C. ; Lin, T.D. ; Lin, D. ; Shiu, K.H. ; Kwo, J. ; Wang, W.E. ; Tsai, W. ; Hong, M.
Author_Institution :
Dept. Mat. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu
fYear :
2008
fDate :
15-17 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
Electrical characteristics of oxide-In0.2Ga0.8As interface in ultra-high vacuum (UHV)-deposited Al2O3(3 nm)/Ga2O3 (Gd2O3) (8.5 nm) on n- and p-In0.2Ga0.8As/GaAs are studied. Capacitance-voltage (C-V) measurements under light illumination and under wide range of temperatures as well as corresponding conductance-voltage (G-V) measurements were carried out. Extremely high-quality interfaces with free-moving Fermi-level near the conductance and valence band-edges (regions close to Ec and Ev) are revealed for the Ga2O3(Gd2O3)/In0.2Ga0.8As system.
Keywords :
Fermi level; III-V semiconductors; alumina; conduction bands; gallium arsenide; indium compounds; semiconductor-insulator boundaries; valence bands; Al2O3-Ga2O3-Gd2O3-In0.2Ga0.8As-GaAs; Fermi level; capacitance-voltage measurements; conductance-voltage measurements; free-moving Fermi-level; valence band-edges; Aluminum oxide; Capacitance measurement; Capacitance-voltage characteristics; Dielectric measurements; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Lighting; Passivation; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
ISSN :
8164-2284
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
Type :
conf
DOI :
10.1109/IEDM.2008.4796698
Filename :
4796698
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2929705
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