Fluorinated HfO2 gate dielectrics engineering for CMOS by pre- and post-CF4 plasma passivation

Author

Wu, Woei-Cherng ; Lai, Chao-Sung ; Lee, Shih-Ching ; Ma, Ming-Wen ; Chao, Tien-Sheng ; Wang, Jer-Chyi ; Hsu, Chih-Wei ; Chou, Pai-Chi ; Chen, Jian-Hao ; Kao, Kuo-Hsing ; Lo, Wen-Cheng ; Lu, Tsung-Yi ; Tay, Li-Lin ; Rowell, Nelson

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

In this paper, we demonstrate TaN/fluorinated HfO₂ CMOS devices, focusing on symmetry and asymmetry fluorine incorporation at top or bottom HfO₂ interfaces. 16% permittivity enhancement, 65% and 91% mobility increases for electron and hole, respectively, under high electric field was achieved. Reliability of n- and p-MOSFET was improved 3 orders and 8% for GIDL and hot carrier immunity, respectively. A physical model of shallow and deep trapping level affected by fluorine was proposed to explain the NBTI and PBTI improvements.

Keywords

CMOS integrated circuits; MOSFET; hafnium compounds; high-k dielectric thin films; passivation; plasma materials processing; semiconductor device models; semiconductor device reliability; tantalum compounds; thermal stability; CF₄; CMOS device; GIDL; NBTI; PBTI; TaN-HfO₂; fluorinated gate dielectric; gate induced drain leakage; negative bias temperature instability; p-MOSFET; plasma passivation; positive bias temperature instability; post-treated high-k thin film; Atomic layer deposition; Dielectric thin films; Hafnium oxide; Materials science and technology; Nuclear and plasma sciences; Plasma applications; Plasma devices; Plasma materials processing; Semiconductor films; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796706

Filename

4796706