Spectrum control of THz radiation from InSb surface by composite contribution of displacement current and difference frequency mixing

Author

Kono, S. ; Tani, M. ; Sakai, K.

Author_Institution

Commun. Res. Lab., Minist. of Posts & Telecommun., Kobe, Japan

fYear

2000

fDate

7-12 May 2000

Firstpage

558

Lastpage

559

Abstract

Summary form only given.Terahertz radiation from semiconductor surfaces irradiated with ultrashort optical pulses has been intensively studied as a novel radiation source. We observed the change of the THz radiation spectrum from InSb dependent on the azimuthal angle. The change of the spectra can be due to the interference of the THz radiation caused by the displacement current and by the difference frequency mixing. This effect can be used for controlling the THz radiation spectrum.

Keywords

III-V semiconductors; high-speed optical techniques; indium compounds; infrared sources; optical frequency conversion; photoconductivity; submillimetre wave generation; submillimetre wave spectra; DC offset; InSb; azimuthal angle dependence; composite contribution; difference frequency mixing; displacement current; frequency shift; radiation source; semiconductor surface; spectrum control; terahertz radiation; ultrashort optical pulse irradiated surface; Displacement control;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.907385

Filename

907385