• DocumentCode
    29300
  • Title

    Timing Performance of TlBr Detectors

  • Author

    Hitomi, Kentarou ; Tada, Tetsuya ; Onodera, Takayuki ; Shoji, Tomoyuki ; Seong-Yun Kim ; Yuanlai Xu ; Ishii, Kazuki

  • Author_Institution
    Cyclotron & Radioisotope Center, Tohoku Univ., Sendai, Japan
  • Volume
    60
  • Issue
    4
  • fYear
    2013
  • fDate
    Aug. 2013
  • Firstpage
    2883
  • Lastpage
    2887
  • Abstract
    The timing performance of TlBr detectors was evaluated at room temperature (22 °C). 0.5-mm-thick planar TlBr detectors with Tl circular electrodes with a diameter of 3 mm were fabricated from TlBr crystals grown by the traveling molten zone method using a zone-purified material. The pulse rise time of the TlBr detector was measured using a digital oscilloscope as the cathode surface of the device was irradiated with a 22Na gamma-ray source. Coincidence timing spectra were obtained between the TlBr detector and a BaF2 scintillation detector when both detectors were irradiated with 511 keV positron annihilation gamma-rays. The timing resolution of the TlBr detector was found to be inversely proportional to the applied bias voltage. The TlBr detector, in coincidence with the BaF2 detector, exhibited timing resolutions characterized by a 6.5 ns full width at half maximum (FWHM) and an 8.5 ns FWHM with and without an energy window of 350 keV-560 keV, respectively.
  • Keywords
    coincidence techniques; gamma-ray detection; semiconductor counters; semiconductor growth; thallium compounds; 22Na gamma-ray source; BaF2 scintillation detector; Tl circular electrodes; TlBr; TlBr crystals; TlBr detector pulse rise time; TlBr detector timing performance; TlBr detector timing resolution; applied bias voltage; coincidence timing spectra; digital oscilloscope cathode surface; electron volt energy 350 keV to 560 keV; electron volt energy 511 keV; planar TlBr detectors; positron annihilation gamma-rays; size 0.5 mm; size 3 mm; temperature 22 degC; traveling molten zone method; zone purified material; Crystals; Detectors; Gamma-rays; Leakage currents; Semiconductor device measurement; Temperature measurement; Timing; Positron emission tomography; semiconductor radiation detector; thallium bromide; timing resolution;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2013.2268855
  • Filename
    6555936