Title :
MESFET nonlinearities applied to predistortion linearizer design
Author :
Tupynamba, R.C. ; Camargo, E.
Author_Institution :
Lab. de Microelectronica, Sao Paulo Univ., Brazil
Abstract :
Three different circuit topologies of predistortion linearizers are proposed using MESFETs biased at low drain bias. The design of a C-band linearizer using two 1- mu -gate-length devices is detailed, and the achieved results compare favorably with conventional designs which use Schottky diodes. The linearizer reduced by 10 dB the intermodulation products of a 10-W power amplifier operating at 6 GHz, and up to 4-dB back-off.<>
Keywords :
intermodulation; microwave amplifiers; network topology; power amplifiers; solid-state microwave circuits; 1 micron; 10 W; 6 GHz; C-band linearizer; MESFET nonlinearities; back-off; circuit topologies; gate length; intermodulation products; low drain bias; power amplifier; predistortion linearizer design; Circuit topology; MESFET circuits; Microwave amplifiers; Microwave circuits; Phase shifters; Power amplifiers; Predistortion; Schottky diodes; Varactors; Voltage control;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188148
