Title :
A new framework for performance prediction of advanced MOSFETs with plasma-induced recess structure and latent defect site
Author :
Eriguchi, K. ; Nakakubo, Y. ; Matsuda, A. ; Kamei, M. ; Ohta, H. ; Nakagawa, H. ; Hayashi, S. ; Noda, S. ; Ishikawa, K. ; Yoshimaru, M. ; Ono, K.
Author_Institution :
Kyoto Univ., Kyoto
Abstract :
Plasma process-induced recess structure and the latent defect site density are quantitatively evaluated in detail by using optical and electrical methods combined with a classical molecular dynamics (MD) simulation. A new framework is proposed and demonstrated for predicting the relationship between plasma process parameters and MOSFET performance degradation.
Keywords :
MOSFET; capacitance; elemental semiconductors; molecular dynamics method; photoreflectance; plasma materials processing; semiconductor device models; silicon; MOSFET; Si; capacitance-voltage measurement; latent defect site density; molecular dynamics simulation; photoreflectance spectroscopy; plasma-induced recess structure; Capacitance-voltage characteristics; DSL; MOSFETs; Optical distortion; Plasma applications; Plasma density; Plasma devices; Plasma measurements; Plasma simulation; Plasma sources;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796720
