A new framework for performance prediction of advanced MOSFETs with plasma-induced recess structure and latent defect site

Author

Eriguchi, K. ; Nakakubo, Y. ; Matsuda, A. ; Kamei, M. ; Ohta, H. ; Nakagawa, H. ; Hayashi, S. ; Noda, S. ; Ishikawa, K. ; Yoshimaru, M. ; Ono, K.

Author_Institution

Kyoto Univ., Kyoto

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

Plasma process-induced recess structure and the latent defect site density are quantitatively evaluated in detail by using optical and electrical methods combined with a classical molecular dynamics (MD) simulation. A new framework is proposed and demonstrated for predicting the relationship between plasma process parameters and MOSFET performance degradation.

Keywords

MOSFET; capacitance; elemental semiconductors; molecular dynamics method; photoreflectance; plasma materials processing; semiconductor device models; silicon; MOSFET; Si; capacitance-voltage measurement; latent defect site density; molecular dynamics simulation; photoreflectance spectroscopy; plasma-induced recess structure; Capacitance-voltage characteristics; DSL; MOSFETs; Optical distortion; Plasma applications; Plasma density; Plasma devices; Plasma measurements; Plasma simulation; Plasma sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796720

Filename

4796720