Title :
A CMOS-compatible, high RF power, Asymmetric-LDD MOSFET with excellent linearity
Author :
Chang, T. ; Kao, H.L. ; Chen, Y.J. ; Liu, S.L. ; McAlister, S.P. ; Chin, Albert
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu
Abstract :
We report the performance of 0.18 mum RF power MOSFETs with an Asymmetric-Lightly-Doped-Drain (LDD) design. Such devices do not have an n-type drain extension and exhibited better characteristics than conventional MOSFETs at same gate length. The devices showed a DC breakdown voltage of 6.9 V, a 0.54 W/mm power density, 115 GHz fmax, and a good adjacent channel power ratio (ACPR) linearity, as well as a 52% drain efficiency at 2.4 GHz.
Keywords :
UHF field effect transistors; semiconductor device breakdown; semiconductor doping; CMOS-compatible MOSFET; DC breakdown voltage; adjacent channel power ratio linearity; asymmetric-LDD MOSFET; asymmetric-lightly-doped-drain design; frequency 115 GHz; frequency 2.4 GHz; high RF power MOSFET; size 0.18 mum; voltage 6.9 V; Breakdown voltage; Councils; Cutoff frequency; Design engineering; Gallium arsenide; Linearity; MOSFET circuits; Power MOSFET; Power engineering and energy; Radio frequency;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796724
