Title :
Reliability analysis for power MOSFET based on multi-physics simulation
Author :
Shuo Li ; Hong Wang ; Shiyuan Yang
Author_Institution :
Dept. of Autom., Tsinghua Univ., Beijing, China
Abstract :
Power MOSFET plays an increasingly important role in power electric system and safety critical field. Study on reliability and prognostic method of power MOSFET is critical in ensuring safety. This pape r proposes a reliability analysis method for power MOSFET based on multi-physics simulation. Electric-thermal - structure models are studie d for the construction of health state dictionary, which records the health working state of online power MOSFET under certain working condition. Based on the health state dictionary and in-situ monitoring data, a health criterion function is used to evaluate the state of device. The methodology can be served as the bases for further prognostic study and remain useful life prediction.
Keywords :
power MOSFET; semiconductor device models; semiconductor device reliability; health state dictionary; health working state; multi-physics simulation; power MOSFET; power electric system; prognostic method; reliability analysis; safety critical field; Employee welfare; Insulated gate bipolar transistors; Junctions; Load modeling; MOSFET; Power dissipation; Reliability; power MOSFET; prognostic; reliability; simulation;
Conference_Titel :
Test Symposium (ETS), 2015 20th IEEE European
Conference_Location :
Cluj-Napoca
DOI :
10.1109/ETS.2015.7138731