Silicon photonic modulator and integration for high-speed applications

Author

Liao, Ling ; Liu, Ansheng ; Basak, Juthika ; Nguyen, Hat ; Paniccia, Mario ; Chetrit, Yoel ; Rubin, Doron

Author_Institution

Intel Corp., Santa Clara, CA

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

We present recent results of a silicon photonic integrated chip that is capable of transmitting data at an aggregate rate of 200 Gb/s. It is based on wavelength division multiplexing where an array of eight high speed silicon optical modulators are monolithically integrated with a demultiplexer and a multiplexer. The modulators, each capable of 25 Gb/s data transmission, are based on the carrier depletion effect of pn diodes, and the demultiplexer/multiplexer is based on a cascaded asymmetric Mach Zehnder interferometer design.

Keywords

elemental semiconductors; multiplexing equipment; optical modulation; silicon; wavelength division multiplexing; Si; bit rate 200 Gbit/s; carrier depletion effect; cascaded asymmetric Mach Zehnder interferometer design; photonic integrated chip; pn diodes; silicon photonic modulator; wavelength division multiplexing; Aggregates; Data communication; Diodes; High speed optical techniques; Integrated optics; Optical arrays; Optical interferometry; Optical modulation; Silicon; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796726

Filename

4796726