DocumentCode :
2930241
Title :
Fast, accurate, on-wafer extraction of parasitic resistances and inductances in GaAs MESFETs and HEMTs
Author :
Costa, J.C. ; Miller, M. ; Golio, M. ; Norris, G.
Author_Institution :
Motorola Inc., Tempe, AZ, USA
fYear :
1992
fDate :
1-5 June 1992
Firstpage :
1011
Abstract :
A novel method of extracting the parasitic resistance and inductance values for MESFETs, and high electron mobility transistors (HEMTs) is presented. The technique requires the use of only RF two-port measurement data, is extremely accurate, straightforward to implement and works equally well for both MESFETs and HEMTs. The technique makes use of cold-chip measurements in conjunction with a unique analysis that has proved to be both fast and robust. The method does not require that channel resistance or diode resistance be evaluated or that excessive values of gate current be used in the measurements.<>
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; electric resistance measurement; gallium arsenide; high electron mobility transistors; inductance measurement; microwave measurement; semiconductor device testing; solid-state microwave devices; GaAs; HEMTs; MESFETs; RF two-port measurement data; S-parameters; cold-chip measurements; on-wafer extraction; parasitic inductance; parasitic resistances; Current measurement; Data mining; Diodes; Electrical resistance measurement; HEMTs; Inductance; MESFETs; MODFETs; Radio frequency; Robustness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-0611-2
Type :
conf
DOI :
10.1109/MWSYM.1992.188162
Filename :
188162
Link To Document :
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