Fast, accurate, on-wafer extraction of parasitic resistances and inductances in GaAs MESFETs and HEMTs

Author

Costa, J.C. ; Miller, M. ; Golio, M. ; Norris, G.

Author_Institution

Motorola Inc., Tempe, AZ, USA

fYear

1992

fDate

1-5 June 1992

Firstpage

1011

Abstract

A novel method of extracting the parasitic resistance and inductance values for MESFETs, and high electron mobility transistors (HEMTs) is presented. The technique requires the use of only RF two-port measurement data, is extremely accurate, straightforward to implement and works equally well for both MESFETs and HEMTs. The technique makes use of cold-chip measurements in conjunction with a unique analysis that has proved to be both fast and robust. The method does not require that channel resistance or diode resistance be evaluated or that excessive values of gate current be used in the measurements.<>

Keywords

III-V semiconductors; S-parameters; Schottky gate field effect transistors; electric resistance measurement; gallium arsenide; high electron mobility transistors; inductance measurement; microwave measurement; semiconductor device testing; solid-state microwave devices; GaAs; HEMTs; MESFETs; RF two-port measurement data; S-parameters; cold-chip measurements; on-wafer extraction; parasitic inductance; parasitic resistances; Current measurement; Data mining; Diodes; Electrical resistance measurement; HEMTs; Inductance; MESFETs; MODFETs; Radio frequency; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188162

Filename

188162