Observation of optical gain in ultra-thin silicon resonant cavity light-emitting diode

Author

Saito, S. ; Sakuma, N. ; Suwa, Y. ; Arimoto, H. ; Hisamoto, D. ; Uchiyama, H. ; Yamamoto, J. ; Sakamizu, T. ; Mine, T. ; Kimura, S. ; Sugawara, T. ; Aoki, M. ; Onai, T.

Author_Institution

Central Res. Lab., Hitachi, Ltd., Tokyo

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

We have observed net optical gain by current injections to ultra-thin Si embedded in a resonant optical cavity. The cavity consists of a dielectric waveguide fabricated by CMOS and MEMS process. The photoluminescence (PL) spectra show narrow resonances peaked at the designed wavelength, and the electroluminescence (EL) intensity increases super-linearly with currents. The comparisons with first principle calculations suggest that the optical gain is originated from intrinsic material properties of ultra-thin Si due to quantum confinements.

Keywords

CMOS integrated circuits; ab initio calculations; cavity resonators; electroluminescence; elemental semiconductors; integrated optics; light emitting diodes; micro-optics; optical waveguides; photoluminescence; silicon; CMOS process; MEMS; current injections; dielectric waveguide; electroluminescence intensity; first principle calculations; optical gain; photoluminescence spectra; quantum confinements; resonant optical cavity; ultrathin silicon resonant cavity light-emitting diode; CMOS process; Dielectrics; Electroluminescence; Light emitting diodes; Material properties; Micromechanical devices; Optical waveguides; Photoluminescence; Resonance; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796727

Filename

4796727