Title :
Diode characterization in a microstrip measurement system for high power microwave power transmission
Author :
McSpadden, J. ; Yoo, T. ; Chang, K.
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
Abstract :
A method has been devised to experimentally characterize a packaged diode by insertion in a microstrip test mount. The diode was shunt-mounted to the ground plane where a network analyzer measured the scattering parameters from the two-port test fixture. The equivalent circuit parameters were extracted from the measured data. A large signal measurement using the same test mount has also been configured to determine the power conversion efficiency from RF to DC as well as to determine the embedded network impedance of the diode. Experimental characterization, conversion efficiencies, and input impedance of a GaAs Schottky barrier diode are presented. The method is quite general and can be used for characterizing solid-state devices for other applications.<>
Keywords :
III-V semiconductors; S-parameters; Schottky-barrier diodes; electric impedance measurement; gallium arsenide; microstrip lines; microwave measurement; semiconductor device testing; solid-state microwave devices; 600 MHz to 4.2 GHz; GaAs; Schottky barrier diode; embedded network impedance; equivalent circuit parameters; high power microwave power transmission; input impedance; large signal measurement; microstrip measurement system; network analyzer; packaged diode characterization; power conversion efficiency; scattering parameters; shunt mounted diode; two-port test fixture; Circuit testing; Data mining; Equivalent circuits; Fixtures; Impedance; Microstrip; Packaging; RF signals; Scattering parameters; Schottky diodes;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188163
