Accurate on-wafer power and harmonic measurements of MM-wave amplifiers and devices

Author

Hughes, B. ; Ferrero, A. ; Cognata, A.

Author_Institution

Hewlett-Packard, Santa Rosa, CA, USA

fYear

1992

fDate

1-5 June 1992

Firstpage

1019

Abstract

A novel integrated test system that accurately measures on-wafer S-parameters, power levels, load-pull contours and harmonics over 1 to 50 GHz is presented. The system measures power and S-parameters with single contact measurements and integrated hardware. There are two keys to this system: first, the network analyzer samplers are used as frequency-selective power meters with large dynamic ranges; second, all measurements are vector-corrected to the device under test reference planes. The capabilities and accuracy were demonstrated by measuring the power at the fundamental frequency and four harmonic frequencies of a 50-GHz traveling wave amplifier and the load-pull contours of a MODFET at 30 GHz.<>

Keywords

S-parameters; electron tube testing; harmonics; microwave amplifiers; microwave measurement; network analysers; power measurement; semiconductor device testing; solid-state microwave devices; 1 to 50 GHz; MM-wave amplifiers; MODFET; S-parameters; device under test reference planes; frequency-selective power meters; harmonic frequencies; harmonic measurements; integrated test system; large dynamic ranges; load-pull contours; network analyzer samplers; on wafer measurement; power levels; traveling wave amplifier; Dynamic range; Frequency measurement; HEMTs; Hardware; MODFETs; Power amplifiers; Power measurement; Power system harmonics; Scattering parameters; System testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188164

Filename

188164