Title :
Circuit techniques for efficient linearised GaAs MMIC´s
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll., London, UK
Abstract :
The author discusses novel circuit designs for monolithic microwave integrated circuit technology using depletion-mode GaAs MESFETs. A synthesis method leading to high efficiency implementation of linear functions based on a square-law FET characteristic is presented and used to design a linearized isolator, which is compared with a nonlinearized design. A circuit equivalent to a common-gate FET, but with linearity, high efficiency, and reduced FET gate-width and power consumption, is proposed for future use in improved isolators and amplifiers.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; linear integrated circuits; linear network synthesis; microwave isolators; FET gate-width; GaAs; circuit designs; common-gate FET; depletion-mode GaAs MESFETs; linearised MMIC; linearized isolator; monolithic microwave integrated circuit technology; power consumption; square-law FET characteristic; synthesis method; Circuit synthesis; Energy consumption; Gallium arsenide; High power amplifiers; Integrated circuit synthesis; Integrated circuit technology; Isolators; Linearity; MESFETs; Microwave FETs;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188168
