GaAs ICs for 5 GHz microwave landing system front-end

Author

De Gouy, J.L. ; Boutigny, P.H. ; Jean, P. ; Grancher, A.

fYear

1992

fDate

1-5 June 1992

Firstpage

1055

Abstract

The full integration of the 5-GHz front-end of MLS (microwave landing system) equipment shows the maturity of the GaAs application specific integrated circuit (ASIC) design. The architecture uses five GaAs chips on a 2-in/sup 2/ hybrid. All the different functions, such as amplifiers, switches, oscillators, and mixers, as well as digital functions needed for fractional divider frequency synthesis. have been integrated. All the designed ASICs fully comply with specifications and allow the equipment to run in a military environment. The results in terms of spectral purity are very satisfactory.<>

Keywords

III-V semiconductors; MMIC; application specific integrated circuits; gallium arsenide; microwave landing systems; military equipment; 5 GHz; ASIC; GaAs application specific integrated circuit; MLS; amplifiers; architecture; digital functions; fractional divider frequency synthesis; microwave landing system front-end; military environment; mixers; oscillators; spectral purity; switches; Application specific integrated circuits; Frequency conversion; Frequency synthesizers; Gallium arsenide; Integrated circuit synthesis; Microwave devices; Microwave oscillators; Military equipment; Multilevel systems; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188172

Filename

188172