DocumentCode :
2930414
Title :
Through-silicon via and die stacking technologies for microsystems-integration
Author :
Beyne, Eric ; De Moor, Piet ; Ruythooren, Wouter ; Labie, Riet ; Jourdain, Anne ; Tilmans, Harrie ; Tezcan, Deniz Sabuncuoglu ; Soussan, Philippe ; Swinnen, Bart ; Cartuyvels, Rudi
Author_Institution :
IMEC, Leuven
fYear :
2008
fDate :
15-17 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
The highest integration density of microsystems can be obtained using a 3D-stacking approach, where each layer of the stack is realized using a different technology, which may include sensors, imagers, rf and MEMS technologies. A key challenge is however to perform such stacking in a cost-effective manner. In this paper, a novel 3D TSV and 3D stacking technologies will be presented. Application examples are MEMS packaging and heterogeneous integration of imaging devices.
Keywords :
electronics packaging; interconnections; micromechanical devices; 3D stacking technologies; MEMS packaging; die stacking technologies; imaging devices; microsystems-integration; through-silicon via; Bonding processes; Microelectromechanical devices; Micromechanical devices; Packaging; Soldering; Space technology; Stacking; Through-silicon vias; Wafer bonding; Wafer scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
ISSN :
8164-2284
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
Type :
conf
DOI :
10.1109/IEDM.2008.4796734
Filename :
4796734
Link To Document :
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