Title :
23-40 GHz InP HEMT MMIC distributed mixer
Author :
Majidi-Ahy, R. ; Nishimoto, C. ; Russell, J. ; Weiming Ou ; Bandy, S. ; Zdasiuk, G.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
Abstract :
The authors report the development of an active millimeter-wave InP high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) distributed mixer operating over 23-40-GHz RF bandwidth, with IF frequencies in the range of 2-13 GHz, and fixed local oscillator frequencies of 20 and 28 GHz. The devices were InGaAs-InAlAs-InP HEMTs with a gate length of 0.25 mu m. The mixer had an average conversion gain of 0 dB when biased for maximum bandwidth, and an average conversion gain of 5 dB when biased for maximum gain. The overall chip dimensions for this MMIC were 500 by 1000 mu m.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; indium compounds; mixers (circuits); 0 dB; 0.25 micron; 2 to 13 GHz; 20 GHz; 23 to 40 GHz; 28 GHz; 5 dB; HEMT MMIC distributed mixer; IF frequencies; InGaAs-InAlAs-InP; InP; RF bandwidth; chip dimensions; conversion gain; fixed local oscillator frequencies; gate length; Bandwidth; Frequency; Gain; HEMTs; Indium phosphide; MMICs; MODFETs; Millimeter wave integrated circuits; Millimeter wave transistors; Mixers;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188174
