DocumentCode :
2930551
Title :
Power MOSFETs working in linear zone: The dangerous effect of the K gain factor on thermal instability
Author :
Consentino, Giuseppe
Author_Institution :
STMicroelectron., Catania, Italy
fYear :
2012
fDate :
20-22 June 2012
Firstpage :
1515
Lastpage :
1519
Abstract :
The gain factor K of the power MOSFET is an electrical parameter that mathematically speaking connects VGS to ID. Practically, higher is K higher will be ID fixing VGS, VTH and all the others physical and electrical parameters. K is a very important electrical parameter regarding the power MOSFET working in linear operating zone. In fact, even if, typically, higher K factor needs in switching operation mode, in linear zone, instead, K must be low to avoid a possible premature failure of the device.
Keywords :
power MOSFET; dangerous effect; electrical parameter; gain factor; linear operating zone; linear zone; physical parameters; power MOSFET; switching operation mode; thermal instability; MOSFETs; Performance evaluation; Power electronics; Standards; Switches; Thermal factors; Thermal resistance; Gain factor; Linear zone; power MOSFET; thermal instability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM), 2012 International Symposium on
Conference_Location :
Sorrento
Print_ISBN :
978-1-4673-1299-8
Type :
conf
DOI :
10.1109/SPEEDAM.2012.6264522
Filename :
6264522
Link To Document :
بازگشت