Title :
Design, fabrication and evaluation of tunnel transit-time diodes for V-band and W-band power generation
Author :
Kidner, C. ; Eisele, H. ; East, J. ; Haddad, G.I.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The authors have successfully designed and tested GaAs p/sup +/n/sup +/n/sup -/n/sup +/ single-drift tunnel injection transit-time (TUNNETT) diodes for V-band and W-band operation. The basic structure and electric field profile of the device are shown. Both designs operated within the range of frequencies expected. The V-band devices produced 26 mW at 58 GHz with 1.4% efficiency. The W-band devices produced 33 mW at 93.5 GHz with 2.65% efficiency. The oscillations had a clean spectrum. The devices were fabricated from molecular beam epitaxy (MBE)-grown material.<>
Keywords :
III-V semiconductors; gallium arsenide; microwave oscillators; transit time devices; tunnel diode oscillators; tunnel diodes; 1.4 percent; 2.65 percent; 26 mW; 33 mW; 58 GHz; 93.5 GHz; GaAs; V-band power generation; W-band power generation; electric field profile; free running oscillator; molecular beam epitaxy; p/sup +/n/sup +/n/sup -/n/sup +/ TUNNETT diodes; tunnel transit-time diodes; Diodes; Doping; Fabrication; Frequency; Gallium arsenide; Gold; Impact ionization; Power generation; Testing; Tunneling;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188181
