DocumentCode :
2930665
Title :
Long-term operation and reliability study of a 1200-V, 880-A all-SiC dual module
Author :
Wood, R.A. ; Salem, T.E.
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
fYear :
2012
fDate :
20-22 June 2012
Firstpage :
1520
Lastpage :
1525
Abstract :
SiC MOSFETs are now commercial available and have demonstrated improved efficiency and higher operating temperatures over state of the art silicon components. Ongoing research activities have produced a massively-paralleled all-SiC module to examine the feasibility and reliability of high-current all-SiC modules. This paper documents a reliability study for a 1200-V, 880-A all-SiC dual MOSFET module operated in an experimental circuit. Over 500 hours of circuit runtime has been accumulated and MOSFET characteristics were routinely evaluated. The switches demonstrated a high degree of stability in leakage current, forward resistance, junction temperature rise, and switching energies as all of these characteristics changed less than 14%. With this demonstration of reliability, the substantial benefits of a massively paralleled all-SiC module can be utilized by design engineers for future power electronic systems.
Keywords :
MOSFET; leakage currents; semiconductor device reliability; silicon compounds; wide band gap semiconductors; SiC; current 880 A; dual MOSFET module; forward resistance; high-current all-silicon carbide module reliability; junction temperature rise; leakage current stability; massively-paralleled all-silicon carbide module; power electronic systems; switching energy; voltage 1200 V; Current measurement; Inverters; Leakage current; MOSFETs; Reliability; Resistance; Vehicles; Silicon carbide; power MOSFET; power conversion; semiconductor device reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM), 2012 International Symposium on
Conference_Location :
Sorrento
Print_ISBN :
978-1-4673-1299-8
Type :
conf
DOI :
10.1109/SPEEDAM.2012.6264530
Filename :
6264530
Link To Document :
بازگشت