Impact of platinum incorporation on thermal stability and interface resistance in NiSi/Si junctions based on first-principles calculation

Author

Marukame, Takao ; Yamauchi, Takashi ; Nishi, Yoshifumi ; Sasaki, Tomokazu ; Kinoshita, Atsuhiro ; Koga, Junji ; Kato, Koichi

Author_Institution

Corp. R&D Center, Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

We studied extremely low interface resistance and thermal stability of the interface of NiSi/Si junctions with Pt (Ni(Pt)Si/Si junctions) based on first-principles calculation. The physical origin of thermal stability of NiSi enhanced by Pt is clarified by the calculations. Our calculations show clear difference of energies for dopant atoms of As and B between PtSi/Si and NiSi/Si. The results obtained theoretically and experimentally in this study demonstrate the dipole comforting Schottky junctions enhanced by PtSi at the interface for extremely low resistance.

Keywords

ab initio calculations; elemental semiconductors; nickel alloys; semiconductor-metal boundaries; silicon; silicon alloys; thermal stability; NiSi-Si; Schottky junctions; dopant atoms; first-principles calculation; interface resistance; thermal stability; Atomic layer deposition; Atomic measurements; Distributed control; Impurities; Large scale integration; Platinum; Silicidation; Silicides; Thermal resistance; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796747

Filename

4796747