DocumentCode :
2930678
Title :
Analytical model for RESET operation of Phase Change Memory
Author :
Rajendran, B. ; Karidis, J. ; Lee, M.-H. ; Breitwisch, M. ; Burr, G.W. ; Shih, Y.H. ; Cheek, R. ; Schrott, A. ; Lung, HL ; Lam, C.
Author_Institution :
T.J. Watson Res. Center, IBM, Yorktown Heights, NY
fYear :
2008
fDate :
15-17 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
We present a novel analytical model for the RESET operation of Phase Change Memory (PCM) that explicitly describes the dependency of the programming current on various cell dimensions and material parameters. This model also explains, for the first time, the fundamental physics behind the inverse relationship between dynamic resistance(Rd) and the amplitude of the programming current.
Keywords :
phase change memories; RESET operation; dynamic resistance; phase change memory; programming current; Analytical models; Contacts; Electric resistance; Electrodes; Phase change materials; Phase change memory; Resistance heating; Steady-state; Thermal conductivity; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
ISSN :
8164-2284
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
Type :
conf
DOI :
10.1109/IEDM.2008.4796748
Filename :
4796748
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2930678
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