• DocumentCode
    2930678
  • Title

    Analytical model for RESET operation of Phase Change Memory

  • Author

    Rajendran, B. ; Karidis, J. ; Lee, M.-H. ; Breitwisch, M. ; Burr, G.W. ; Shih, Y.H. ; Cheek, R. ; Schrott, A. ; Lung, HL ; Lam, C.

  • Author_Institution
    T.J. Watson Res. Center, IBM, Yorktown Heights, NY
  • fYear
    2008
  • fDate
    15-17 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We present a novel analytical model for the RESET operation of Phase Change Memory (PCM) that explicitly describes the dependency of the programming current on various cell dimensions and material parameters. This model also explains, for the first time, the fundamental physics behind the inverse relationship between dynamic resistance(Rd) and the amplitude of the programming current.
  • Keywords
    phase change memories; RESET operation; dynamic resistance; phase change memory; programming current; Analytical models; Contacts; Electric resistance; Electrodes; Phase change materials; Phase change memory; Resistance heating; Steady-state; Thermal conductivity; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2008. IEDM 2008. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    8164-2284
  • Print_ISBN
    978-1-4244-2377-4
  • Electronic_ISBN
    8164-2284
  • Type

    conf

  • DOI
    10.1109/IEDM.2008.4796748
  • Filename
    4796748
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2930678