A new physics-based model for TANOS memories program/erase

Author

Mauri, A. ; Compagnoni, C. Monzio ; Amoroso, S. ; Maconi, A. ; Cattaneo, F. ; Benvenuti, A. ; Spinelli, A.S. ; Lacaita, A.L.

Author_Institution

R&D - Technol. Dev., Numonyx, Agrate Brianza

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

We present a new physics-based model able to reproduce the program/erase transients in TANOS memories, accurately describing the charge trapping/detrapping dynamics in the nitride layer. Modeling results are extensively validated against a large number of experimental data taken on samples with different gate stack compositions, considering a quite extended range of program/erase voltages and times. The good agreement between experimental and simulated results makes the developed model a useful tool for the assessment of the performance achievable by the TANOS technology.

Keywords

alumina; integrated circuit modelling; integrated memory circuits; silicon compounds; tantalum compounds; TANOS memories; TaN-Al₂O₃-Si₃N₄-SiO₂; charge detrapping dynamics; charge trapping dynamics; gate stack compositions; nitride layer; physics-based model; program/erase transients; Capacitors; Dielectric devices; Dielectric substrates; Displays; Electron traps; Interference; Leakage current; Nonvolatile memory; Research and development; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796749

Filename

4796749