Title :
New physical model for ultra-scaled 3D nitride-trapping non-volatile memories
Author :
Nowak, E. ; Bocquet, M. ; Perniola, L. ; Ghibaudo, G. ; Molas, G. ; Jahan, C. ; Kies, R. ; Reimbold, G. ; De Salvo, B. ; Boulanger, F.
Author_Institution :
CEA-LETI MINATEC, Grenoble
Abstract :
In this paper, we present a semi-analytical model tailored for nitride Charge-Trap TriGate (CT-3G) non-volatile memories under uniform stress: Fowler-Nordheim (FN) program (P) and erase (E) performances are reproduced. This model presents innovations in the tunnelling current calculation at corners through the Hankel function formalism. The validation of the model is operated through extensive comparisons with experimental data obtained on ultra-scaled devices with different aspect ratios and gate stacks. Scaling opportunities of such kind of 3D devices are deeply discussed.
Keywords :
Hankel transforms; NAND circuits; flash memories; nitrogen compounds; Hankel function formalism; NAND Flash memories; nitride charge-trap trigate; tunnelling current calculation; ultra-scaled 3D nitride-trapping nonvolatile memories; ultra-scaled devices; Dielectrics; Geometry; Hafnium oxide; Nonvolatile memory; SONOS devices; Stress; Technological innovation; Tin; Transmission line matrix methods; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796750
