Title :
Oxide-based RRAM switching mechanism: A new ion-transport-recombination model
Author :
Gao, B. ; Yu, S. ; Xu, N. ; Liu, L.F. ; Sun, B. ; Liu, X.Y. ; Han, R.Q. ; Kang, J.F. ; Yu, B. ; Wang, Y.Y.
Author_Institution :
Peking Univ.&Key Lab. of Microelectron. Devices & Circuits, Beijing
Abstract :
This paper presents a unified physical model to elucidate the resistive switching behavior of metal-oxide-based resistive random access memory (RRAM) devices using the ion-transport-recombination model. In this model, the rupture of conductive filaments is caused by recombination of oxygen ions and electron-low-occupied oxygen vacancies. The transport equations of interstitial oxygen ions in the oxide matrix are introduced to quantitatively investigate the reset speed and other properties such as uniformity, endurance, and reset current. The proposed mechanism was verified by experiments.
Keywords :
ion recombination; random-access storage; transport processes; conductive filament rupture; electron-low-occupied oxygen vacancies; ion-transport-recombination model; oxide matrix; oxide-based RRAM switching mechanism; oxygen ions; resistive random access memory devices; transport equations; Bismuth; Boundary conditions; Electrodes; Electrons; Equations; Low voltage; Microelectronics; Random access memory; Scalability; Spontaneous emission;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796751
