Title :
GaAs Schottky barrier diodes for THz applications
Author :
Crowe, T.W. ; Peatman, W.C.B. ; Wood, P.A.D. ; Xiaolei Liu
Author_Institution :
Semicond. Device Lab., Virginia Univ., Charlottesville, VA, USA
Abstract :
The authors review the basic operation of Schottky mixer elements, and consider the factors that limit the high-frequency performance of these devices. The design process used to achieve the best heterodyne receiver performance is discussed. Recent results with ultra-small Schottky anodes are presented, and conclusions are drawn about the future of Schottky diodes at terahertz frequencies.<>
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; solid-state microwave devices; submillimetre wave devices; EHF; GaAs; MM-wave type; Schottky barrier diodes; THF; THz applications; design process; heterodyne receiver performance; high-frequency performance; mixer elements; terahertz frequencies; ultra-small Schottky anodes; Anodes; Capacitance; Circuit noise; Frequency; Gallium arsenide; Light emitting diodes; Process design; Schottky barriers; Schottky diodes; Semiconductor diodes;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188196
