Title :
Carrier transport and stress engineering in advanced nanoscale transistors from (100) and (110) transistors to carbon nanotube FETs and beyond
Author :
Uchida, Ken ; Saitoh, Masumi ; Kobayashi, Shigeki
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo
Abstract :
Carrier transport in advanced MOSFETs is reviewed. First, electron and hole mobility in (110) MOSFETs are compared with those in (100) MOSFETs. Stress engineering is discussed in terms of energy split and effective mass due to the stress. The optimization of multi-gate MOSFET structure is then considered. As an example of ballistic MOSFETs, the performance and stress engineering of CNT FETs with doped junctions are investigated.
Keywords :
MOSFET; electron mobility; hole mobility; nanoelectronics; nanotube devices; semiconductor doping; stress effects; carbon nanotube FET; carrier transport; doped junction; electron mobility; hole mobility; multigate MOSFET structure optimization; nanoscale transistor; stress engineering; Compressive stress; Effective mass; Electron mobility; FETs; Light scattering; MOSFETs; Optical scattering; Phonons; Power engineering and energy; Transistors;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796753
