Title :
Regenerative SiC frequency converter with compact Z-source DC-link and sinusoidal output voltage
Author :
Lechler, Martin ; Piepenbreier, Bernhard
Author_Institution :
Univ. Erlangen-Nuremberg, Erlangen, Germany
Abstract :
In this paper a new Z-source frequency converter with silicon carbide (SiC) components is presented. Both, the motor side and the line side converter, contain SiC-VJFETs using the reverse-conducting capability for freewheeling. The application of SiC transistors with their low switching losses, allows high switching frequencies (up to 125 kHz), so the volume of the DC-link and filter components is reduced.
Keywords :
AC-AC power convertors; frequency convertors; junction gate field effect transistors; silicon compounds; wide band gap semiconductors; AC-AC converter; SiC; VJFET; Z-source frequency converter; compact Z-source DC-link; filter components; line side converter; low switching losses; motor side; regenerative frequency converter; reverse-conducting capability; sinusoidal output voltage; transistors; Induction motors; Inductors; Inverters; Logic gates; Silicon carbide; Switches; Transistors; AC/AC converter; Gate Drive Unit; Silicon Carbide (SiC) VJFET; Z-Source topology;
Conference_Titel :
Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM), 2012 International Symposium on
Conference_Location :
Sorrento
Print_ISBN :
978-1-4673-1299-8
DOI :
10.1109/SPEEDAM.2012.6264542
