DocumentCode :
2930899
Title :
Session 25: Special evening session the future of fabs
Author :
Stork, Hans
Author_Institution :
Applied Materials, USA
fYear :
2008
fDate :
15-17 Dec. 2008
Firstpage :
1
Lastpage :
1
Abstract :
The history of semiconductor fabs has seen exponential growth in size, volume and cost. From chemistry lab to ultra-clean, large wafer automated handling systems, the productivity increase has contributed to the sustained cost reduction as guided by Moore´s law. If history were to repeat, 450mm wafer sizes would soon be here, single wafer processing would be the only tool option, and the productivity of just a few of such gigafabs would be enough to supply the smallest geometries. What factors would control this transition? Will non-optical litho be an essential element of this? What will happen to the 300mm fabs? Perhaps the change to atomic layer control dictates different processing priorities, perhaps wafers are not the only or ultimate substrate for all applications? Will the less scalable technologies like analog, or MEMS, or (bio)medical demand a higher fraction of worldwide capacity growth? These and other questions will be discussed by a distinguished panel of fab experts from Samsung, TSMC, Toshiba, Micron, ASML, and Applied Materials.
Keywords :
Atomic layer deposition; Chemistry; Costs; Geometry; History; Micromechanical devices; Moore´s Law; Process control; Productivity; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA, USA
ISSN :
8164-2284
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
Type :
conf
DOI :
10.1109/IEDM.2008.4796759
Filename :
4796759
Link To Document :
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