A 3.5 watt high efficiency GaAs FET amplifier for digital telephone communications

Author

Easton, M. ; Basset, R. ; Day, D.S. ; Hua, C. ; Chang, C.S. ; Wei, J.

Author_Institution

Avantek, Santa Clara, CA, USA

fYear

1992

fDate

1-5 June 1992

Firstpage

1183

Abstract

A high-efficiency 3.5-W power module intended for commercial application in the digital cellular telephone market is described. The demonstration circuit is designed to be coupled with a functional gain control circuit or can be a stand-alone power stage. The GaAs FET module operates at 6.2 V, and produces 35.5 dBm of output power, 12.5 dB of gain, and 53% power added efficiency in the 890-920-MHz frequency range.<>

Keywords

III-V semiconductors; cellular radio; digital radio systems; field effect transistor circuits; gallium arsenide; microwave amplifiers; microwave integrated circuits; power amplifiers; power transistors; radiotelephony; ultra-high-frequency amplifiers; 12.5 dB; 3.5 W; 53 percent; 6.2 V; 890 to 920 MHz; BeO substrate; FET amplifier; GaAs; MIC; UHF; cellular telephone; commercial application; digital telephone communications; high efficiency; power module; Equivalent circuits; FETs; Fingers; Gallium arsenide; Impedance; Performance evaluation; Shunt (electrical); Substrates; Telephony; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188208

Filename

188208