A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding

Author

Liu, F. ; Yu, R.R. ; Young, A.M. ; Doyle, J.P. ; Wang, X. ; Shi, L. ; Chen, K.N. ; Li, X. ; Dipaola, D.A. ; Brown, D. ; Ryan, C.T. ; Hagan, J.A. ; Wong, K.H. ; Lu, M. ; Gu, X. ; Klymko, N.R. ; Perfecto, E.D. ; Merryman, A.G. ; Kelly, K.A. ; Purushothaman,

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

A 300-mm wafer-level three-dimensional integration (3DI) process using tungsten (W) through-silicon vias (TSVs) and hybrid Cu/adhesive wafer bonding is demonstrated. The W TSVs have fine pitch (5 mum), small critical dimension (1.5 mum), and high aspect ratio (17:1). A hybrid Cu/adhesive bonding approach, also called transfer-join (TJ) method, is used to interconnect the TSVs to a Cu BEOL in a bottom wafer. The process also features thinning of the top wafer to 20 mum and a Cu backside BEOL on the thinned top wafer. The electrical and physical properties of the TSVs and bonded interconnect are presented and show RLC values that satisfy both the power delivery and high-speed signaling requirements for high-performance 3D systems.

Keywords

adhesive bonding; copper; elemental semiconductors; integrated circuit interconnections; silicon; tungsten; wafer bonding; wafer level packaging; Cu; Si; W; bottom wafer; critical dimension; fine pitch; high-performance 3D systems; high-speed signaling requirements; hybrid adhesive bonding; power delivery requirements; size 300 nm; tungsten through-silicon via; wafer-level three-dimensional integration; Etching; Hybrid junctions; Physics computing; Plasma measurements; Power system interconnection; Research and development; Strain measurement; Through-silicon vias; Tungsten; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796762

Filename

4796762