Title :
High electromigration-resistant copper/carbon nanotube composite for interconnect application
Author :
Chai, Yang ; Chan, Philip C.H.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
Abstract :
We demonstrated a Cu/CNT composite material for interconnect application. The electromigration (EM) properties of Cu/CNT composite via and line were investigated using Kelvin and Blech test structures respectively. Our results showed that the EM lifetime of the Cu/CNT composite is more than 5 times longer than Cu.
Keywords :
carbon nanotubes; copper compounds; electromigration; integrated circuit interconnections; nanocomposites; composite material; electromigration-resistant carbon nanotube composite; electromigration-resistant copper composite; Application software; Carbon nanotubes; Conductivity; Copper; Current density; Electric resistance; Electrical resistance measurement; Electromigration; Integrated circuit interconnections; Kelvin;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796764
