• DocumentCode
    2930973
  • Title

    High electromigration-resistant copper/carbon nanotube composite for interconnect application

  • Author

    Chai, Yang ; Chan, Philip C.H.

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
  • fYear
    2008
  • fDate
    15-17 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We demonstrated a Cu/CNT composite material for interconnect application. The electromigration (EM) properties of Cu/CNT composite via and line were investigated using Kelvin and Blech test structures respectively. Our results showed that the EM lifetime of the Cu/CNT composite is more than 5 times longer than Cu.
  • Keywords
    carbon nanotubes; copper compounds; electromigration; integrated circuit interconnections; nanocomposites; composite material; electromigration-resistant carbon nanotube composite; electromigration-resistant copper composite; Application software; Carbon nanotubes; Conductivity; Copper; Current density; Electric resistance; Electrical resistance measurement; Electromigration; Integrated circuit interconnections; Kelvin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2008. IEDM 2008. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    8164-2284
  • Print_ISBN
    978-1-4244-2377-4
  • Electronic_ISBN
    8164-2284
  • Type

    conf

  • DOI
    10.1109/IEDM.2008.4796764
  • Filename
    4796764