• DocumentCode
    2931036
  • Title

    High voltage high current semiconductor devices and its new application-future power electronics possibilities for social infrastructure

  • Author

    Ohashi, Hiromichi

  • Author_Institution
    Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
  • fYear
    2011
  • fDate
    23-27 Oct. 2011
  • Firstpage
    408
  • Lastpage
    411
  • Abstract
    Effective and efficient use of electrical power will become more important for coming highly electrified society. In the highly electrified society, power electronics will become essential means for processing electrical power effectively. Power semiconductor devices (power devices) are key components of power electronics as one of typical switching technologies in electrical engineering. Power device history and future advanced power devices are discussed focusing on high voltage and high current power devices.
  • Keywords
    electrical engineering; history; power semiconductor devices; switching convertors; electrical engineering; electrical power; high voltage high current semiconductor devices; power device history; power electronics; power semiconductor devices; social infrastructure; switching technologies; Diamond-like carbon; HVDC transmission; Insulated gate bipolar transistors; Next generation networking; Silicon; Silicon carbide; Electrified society; Power device; Power electronics; Wide band-gap semiconductor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electric Power Equipment - Switching Technology (ICEPE-ST), 2011 1st International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4577-1273-9
  • Type

    conf

  • DOI
    10.1109/ICEPE-ST.2011.6123019
  • Filename
    6123019