Title :
High-power converters with high switching frequency operation using SiC-PiN diodes and Si-IEGTs
Author :
Takao, Kazuto ; Tanaka, Yasunori ; Sung, Kyungmin ; Wada, Keiji ; Shinohe, Takashi ; Kanai, Takeo ; Ohashi, Hiromichi
Author_Institution :
Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
Abstract :
High-frequency switching operations are required in medium-voltage power converters to realize compact power converter systems. High-voltage hybrid pair modules using SiC-PiN diodes and Si-IEGT are expected to increase the switching frequency. In this work, 4.5 kV-400 A SiC-PiN diode and Si-IEGT hybrid pair modules have been developed. Hard driving is applied to the hybrid pair module for low switching losses and stable series voltage balance between two series-connected modules. Operation tests of developed hybrid pair modules with the switching frequency of 4 kHz have been carried out in a 1 MVA class prototype power converter.
Keywords :
elemental semiconductors; insulated gate bipolar transistors; power semiconductor diodes; silicon; silicon compounds; switching convertors; wide band gap semiconductors; 1 MVA class prototype power converter; Si; Si-IEGT hybrid pair module; SiC; SiC-PiN diode; compact power converter system; current 400 A; frequency 4 kHz; high switching frequency operation; high-power converter; medium-voltage power converter; stable series voltage; switching loss; two series-connected module; voltage 4.5 kV; Inverters; Logic gates; Prototypes; Semiconductor diodes; Switches; Switching circuits; Switching frequency;
Conference_Titel :
Electric Power Equipment - Switching Technology (ICEPE-ST), 2011 1st International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4577-1273-9
DOI :
10.1109/ICEPE-ST.2011.6123020
