DocumentCode :
293140
Title :
An accurate and matching-free threshold voltage extraction scheme for MOS transistors
Author :
Yu, Chong-Gun ; Geiger, Randall L.
Author_Institution :
Dept. of Electron. Eng., Inchon Univ., South Korea
Volume :
4
fYear :
1994
fDate :
30 May-2 Jun 1994
Firstpage :
115
Abstract :
An accurate threshold voltage extraction scheme for MOS transistors is presented. The scheme differs from alternative methods recently reported in the literature in that it does not require matched replica of the transistor under test and thus can be applied more effectively and accurately to real-time on-chip applications where threshold voltage measurements are required for many transistors with various geometries and bias conditions. The proposed scheme is accurately implemented in a matching-free way using a ratio-independent switched-capacitor subtracting amplifier and a dynamic current mirror. Nonideal effects associated with these circuits are investigated
Keywords :
MOS analogue integrated circuits; amplifiers; integrated circuit modelling; switched capacitor networks; MOS transistors; bias conditions; dynamic current mirror; nonideal effects; ratio-independent switched-capacitor subtracting amplifier; real-time on-chip applications; threshold voltage extraction scheme; transistor geometries; Circuit testing; Data mining; Degradation; Equations; Geometry; Linear regression; MOSFETs; Mirrors; Threshold voltage; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1994. ISCAS '94., 1994 IEEE International Symposium on
Conference_Location :
London
Print_ISBN :
0-7803-1915-X
Type :
conf
DOI :
10.1109/ISCAS.1994.409211
Filename :
409211
Link To Document :
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