Thick (200 /spl mu/m) orientation-patterned GaAs for bulk quasi-phase-matched nonlinear frequency conversion

Summary form only given.Quasi-phase-matched frequency conversion in orientation-patterned GaAs is a promising technique for generation of mid-IR radiation from near-IR pump lasers. GaAs has a large nonlinear susceptibility (d/sub 14//spl ges/90 pm/V), a transparency range from around 1 /spl mu/m to beyond 12 /spl mu/m, a high thermal conductivity (46 W/m-K), and a high optical damage threshold. The domain periods required for quasi-phase-matching parametric interactions in GaAs with different pump lasers are shown as a function of signal and idler wavelength. We have demonstrated the fabrication of all-epitaxial, orientation-patterned GaAs films having domain periods suitable for such near-IR-pumped quasi-phase-matched parametric devices and apertures sufficiently thick for bulk optical focusing.