Title :
A 145MHz low phase-noise capacitive silicon micromechanical oscillator
Author :
Lavasani, Hossein Miri ; Samarao, Ashwin K. ; Casinovi, Giorgio ; Ayazi, Farrokh
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
This paper reports on the implementation and characterization of a low phase-noise oscillator based on a very high quality factor (Q) 145MHz capacitive silicon micromechanical resonator. The utilized resonator is a silicon bulk acoustic resonator (SiBAR) operating in its first width-extensional mode with a maximum Qunloaded~74,000 that is specifically optimized for low motional impedance. The sustaining circuitry is a 3.6mW CMOS transimpedance amplifier (TIA) that uses common source topology with local shunt-shunt feedback. The measured phase-noise of the oscillator at 1kHz offset from the carrier is -111dBc/Hz with phase-noise floor reaching below -133dBc/Hz.
Keywords :
CMOS analogue integrated circuits; acoustic resonators; bulk acoustic wave devices; micromechanical resonators; oscillators; phase noise; silicon; CMOS transimpedance amplifier; frequency 145 MHz; high quality factor; local shunt-shunt feedback; low motional impedance; low phase-noise capacitive silicon micromechanical oscillator; micromechanical resonator; power 3.6 mW; silicon bulk acoustic resonator; source topology; Frequency response; Frequency synthesizers; Impedance; Micromechanical devices; Oscillators; Polarization; Q measurement; Silicon; Timing; Voltage;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796784
