DocumentCode :
2931523
Title :
High piezoelectric properties in LiNbO3 transferred layer by the Smart Cut™ technology for ultra wide band BAW filter applications
Author :
Moulet, J.S. ; Pijolat, M. ; Dechamp, J. ; Mazen, F. ; Tauzin, A. ; Rieutord, F. ; Reinhardt, A. ; Defaÿ, E. ; Deguet, C. ; Ghyselen, B. ; Clavelier, L. ; Aïd, M. ; Ballandras, S. ; Mazuré, C.
Author_Institution :
SOITEC SA, Crolles
fYear :
2008
fDate :
15-17 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
For the first time, high overtone bulk acoustic resonators (HBAR) based on thin homogeneous and single crystalline films (below 1mum) of lithium niobate (LiNbO3) have been processed and characterized between 1 and 4 GHz. kt 2 greater than 30% are extracted from the frequency response envelope, by far superior to kt 2 usually obtained with traditional deposited AlN material (limited to 7%). This result confirms the interest of this technology for ultra wide band BAW (bulk acoustic wave) filters. The thin single crystalline LiNbO3 films together with an embedded metal electrode were fabricated using the Smart Cuttrade technology. The crystalline quality of the transferred layer (characterized by XRD and HRTEM) was found to be comparable to the single crystal bulk starting material.
Keywords :
X-ray diffraction; acoustic filters; acoustic resonators; bulk acoustic wave devices; crystal filters; crystal resonators; lithium compounds; piezoelectric materials; piezoelectric thin films; transmission electron microscopy; HRTEM; LiNbO3; Smart Cut technology; XRD; crystalline quality; high overtone bulk acoustic resonators; lithium niobate; piezoelectric properties; thin single crystalline films; ultrawide band BAW filter applications; Acoustic materials; Acoustic waves; Crystalline materials; Crystallization; Film bulk acoustic resonators; Filters; Frequency response; Lithium niobate; Piezoelectric films; Ultra wideband technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
ISSN :
8164-2284
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
Type :
conf
DOI :
10.1109/IEDM.2008.4796785
Filename :
4796785
Link To Document :
بازگشت