Title :
Variability modeling and impact on design
Author :
Onodera, Hidetoshi
Author_Institution :
Grad. Sch. of Inf., Kyoto Univ., Kyoto
Abstract :
Measured variabilities from 0.35 mum to 90 nm processes are explained with a growing concern of within-die components. Variability impact on circuit performance is discussed. A possible approach for mitigating the variability is the introduction of layout regularity, and its effect is examined by test structures in a 90 nm process and lithography simulation in a 45 nm process.
Keywords :
integrated circuit layout; integrated circuit modelling; integrated circuit testing; large scale integration; nanolithography; semiconductor process modelling; LSI design; layout regularity; lithography simulation; size 0.35 micron to 90 nm; test structures; variability modeling; Circuit optimization; Circuit simulation; Circuit testing; Design methodology; Frequency; Informatics; Lithography; MOSFETs; Semiconductor device measurement; Thermal stresses;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796791