Title :
Cryogenically-cooled, HFET amplifiers and receivers: state-of-the-art and future trends
Author :
Pospieszalski, M.W.
Author_Institution :
Nat. Radio Astron. Obs., Charlottesville, VA, USA
Abstract :
Recent progress in the development of ultra-low-noise, cryogenically coolable, HFET (heterostructure field-effect transistor) amplifiers and receivers for radio astronomy applications is reported. Examples of state-of-the-art receivers at frequencies from L- to Q-band are discussed. A model-based prediction of future performance demonstrates that HFET receivers should soon be competitive with SIS (superconductor-insulator-superconductor) mixer receivers at W-band frequencies. It is noted that the trade-off in low-noise amplifier design (bandwidth, input voltage standing wave ratio, stability, gain) can be reliably investigated in a computer model leading to a design with an optimal noise bandwidth performance. The bandwidth of a receiver is no longer limited by the amplifier bandwidth. In many receiving systems, the noise of a HFET amplifier is no longer a dominant contribution to the system noise.<>
Keywords :
circuit CAD; microwave amplifiers; radioastronomy; solid-state microwave circuits; HFET amplifiers; L-band; Q-band; W-band; computer model; cryogenically coolable; heterostructure field-effect transistor; low-noise amplifier design; model-based prediction; noise bandwidth performance; radio astronomy applications; receivers; Bandwidth; Frequency; HEMTs; MODFETs; Predictive models; Radio astronomy; Radiofrequency amplifiers; Receivers; Superconducting device noise; Superconducting devices;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188260