DocumentCode :
2931786
Title :
AlInAs/GaInAs mHEMTs on silicon substrates grown By MOCVD
Author :
Lau, Kei May ; Tang, Chak Wah ; Li, Haiou ; Zhong, Zhenyu
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon
fYear :
2008
fDate :
15-17 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
Metamorphic Al0.50In0.50As/Ga0.47In0.53As high electron mobility transistors (mHEMT) grown by metalorganic chemical vapor deposition (MOCVD) on silicon substrates have been successfully demonstrated for the first time. The grown structures exhibited 2-DEG mobilities over 4500 cm2/V-s, with sheet carrier densities larger than 8 times 1012 cm-2 at room temperature. A 1.0-mum transistor exhibits a maximum transconductance of 587 mS/mm. The cut off and maximum oscillation frequencies were 32.3 and 44 GHz, respectively.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; carrier density; electron mobility; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; semiconductor growth; two-dimensional electron gas; 2-DEG mobility; AlInAs-GaInAs; MOCVD; Si; carrier density; frequency 32.3 GHz; frequency 44 GHz; mHEMT; metalorganic chemical vapor deposition; metamorphic high electron mobility transistors; size 1.0 mum; temperature 293 K to 298 K; transconductance; Charge carrier density; Chemical vapor deposition; Frequency; HEMTs; MOCVD; MODFETs; Silicon; Temperature; Transconductance; mHEMTs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
ISSN :
8164-2284
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
Type :
conf
DOI :
10.1109/IEDM.2008.4796797
Filename :
4796797
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2931786
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