Title :
Floating gate charge-sharing: a novel circuit for analog trimming
Author :
Gao, Weinan ; Snelgrove, W. Martin
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
fDate :
30 May-2 Jun 1994
Abstract :
A floating gate charge-sharing circuit that can be electrically programmed for precise positive and negative voltage changes, and can be implemented in a standard CMOS VLSI process is presented. With the advantage of its long-term charge-retention, the floating gate charge-sharing circuit is suitable for providing a compact, non-volatile and high-precision analog trimming method to trim the offset voltage resulting from unavoidable mismatches in analog circuits such as op-amps and comparators
Keywords :
CMOS analogue integrated circuits; VLSI; analogue storage; CMOS VLSI process; analog circuits; analog trimming; floating gate charge-sharing circuit; long-term charge-retention; negative voltage changes; offset voltage; positive voltage changes; Analog circuits; CMOS analog integrated circuits; CMOS process; Electrons; Operational amplifiers; Parasitic capacitance; Switches; Tunneling; Very large scale integration; Voltage control;
Conference_Titel :
Circuits and Systems, 1994. ISCAS '94., 1994 IEEE International Symposium on
Conference_Location :
London
Print_ISBN :
0-7803-1915-X
DOI :
10.1109/ISCAS.1994.409260