Author :
Fox, A. ; Heinemann, B. ; Barth, R. ; Bolze, D. ; Drews, J. ; Haak, U. ; Knoll, D. ; Kuck, B. ; Kurps, R. ; Marschmeyer, S. ; Richter, H.H. ; Rücker, H. ; Schley, P. ; Schmidt, D. ; Tillack, B. ; Weidner, G. ; Wipf, C. ; Wolansky, D. ; Yamamoto, Y.
Abstract :
We present a double-polysilicon SiGe:C HBT module showing a CML ring oscillator (RO) gate delay tau of 2.5 ps, and fT/ fmax/BVCEo values of 300 GHz/350 GHz/1.85V. A key new feature of the HBT module is a connection of the extrinsic and intrinsic base regions by lateral epitaxial overgrowth. This facilitates simultaneously a very low base resistance and a reduced base-collector capacitance. In addition, the RF performance is enhanced for devices rotated by 45deg with respect to the standard orientation due to favorable epitaxial growth behavior.
Keywords :
Ge-Si alloys; carbon; epitaxial growth; heterojunction bipolar transistors; isolation technology; SiGe:C; base-collector capacitance; frequency 300 GHz; frequency 350 GHz; gate delays; heterojunction bipolar transistors; lateral epitaxial overgrowth; shallow trench isolation; time 2.5 ps; voltage 1.85 V; Capacitance; Delay; Epitaxial growth; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Radio frequency; Ring oscillators; Silicon carbide; Silicon germanium;
