Fabrication and characterisation of strained Si heterojunction bipolar transistors on virtual substrates

Author

Persson, S. ; Fjer, M. ; Escobedo-Cousin, E. ; Malm, G. ; Wang, Y.-B. ; Hellström, P.E. ; Östling, M. ; Parker, E.H.C. ; Nash, L.J. ; Majhi, P. ; Olsen, S.H. ; Neill, A. G O

Author_Institution

Newcastle Univ., Newcastle upon Tyne

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

Strained Si HBTs have been demonstrated for the first time with a maximum current gain (beta) of 3700 using a relaxed Si_0.85Ge_0.15 virtual substrate, Si_0.7Ge_0.3 base and strained Si emitter. This represents 10times and 27times larger gain compared with pseudomorphic SiGe HBTs and Si control BJTs which were manufactured in parallel and had current gains of 334 and 135, respectively. The strained Si HBTs exhibited satisfactory breakdown voltage (2.5 V) compared with SiGe HBTs (2.7 V) and Si BJTs (4.5 V) and excellent control of collector off-state leakage (< 20 fA).

Keywords

Ge-Si alloys; heterojunction bipolar transistors; semiconductor heterojunctions; substrates; Si emitter; SiGe; strained Si heterojunction bipolar transistors; virtual substrates; voltage 2.5 V; voltage 2.7 V; voltage 4.5 V; CMOS technology; Doping; Etching; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Silicon on insulator technology; Strain control; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796800

Filename

4796800