A high power on-wafer pulsed active load pull system

Author

Poulin, D.D. ; Mahon, J.R. ; Lanteri, J.-P.

Author_Institution

Hewlett Packard, Burlington, MA, USA

fYear

1992

fDate

1-5 June 1992

Firstpage

1431

Abstract

An on-wafer load pull system that is capable of measuring load pull contours on true high-power and large-periphery devices is described. Measurements are made under low-duty-cycle pulsed DC and RF conditions to minimize the effects of heating due to power dissipation in the on-wafer environment. With the current implementation of the load pull system, any load impedance on the Smith chart can be presented to the output of 4-W devices. The system is fully error corrected for reflection coefficient, transmission coefficient, input power incident, input power delivered, and output power delivered. The system is capable of automatic control and measurement by means of an HP 9000 series workstation. Data taken on C-band MMIC (monolithic microwave integrated circuit) power amplifiers and 2-mm GaAs FETs are presented.<>

Keywords

MMIC; automatic testing; integrated circuit testing; microwave measurement; semiconductor device testing; solid-state microwave devices; C-band; FETs; GaAs; HP 9000 series workstation; MMIC; RF conditions; Smith chart; automatic measurement; heating; input power delivered; input power incident; load impedance; load pull contours; low-duty-cycle pulsed DC; on-wafer pulsed active load pull system; output power delivered; power amplifiers; power dissipation; reflection coefficient; transmission coefficient; Error correction; Heating; Impedance; MMICs; Power amplifiers; Power dissipation; Power measurement; Pulse measurements; Radio frequency; Reflection;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188278

Filename

188278